dm n 3110l c p3 document number: ds 38546 rev. 3 - 2 1 of 7 www.diodes.com january 2017 ? diodes incorporated dm n 3110l c p3 advanced information n - channel enhancement mode mosfet product summary b v dss r ds(on) max i d t a = + 25c 3 0 v 69 m? @ v gs = 8 v 3 . 2 a 80 m? @ v gs = 4 .5v 3 . 0 a description this new generation mosfet is designed to minimize the footprint in handheld and m obile application. it can be used to replace many small signals mosfet with as really small footprint. applications ? battery management ? load switch ? battery protection ? handheld and mobile application features and benefits ? low q g & q gd ? small footprint ? low profile 0. 3 0 mm height ? totally lead - free & fully rohs compliant (note s 1 & 2 ) ? halogen and antimony free. green device (note mechanical data ? case: x2 - dsn1006 - 3 ? terminal connections: see diagram below ? terminals : finish C matte tin annealed over copper pillar ordering information (note 4 ) part number case packaging dm n 3110 l c p3 - 7 x2 - dsn 10 06 - 3 3000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information date code key year 2014 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 code b c d e f g h i j k l m month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d x 2 - dsn 10 06 - 3 equivalent circuit c = product type marking code ym = date code marking y or y = year (ex: d = 201 6 ) m or m = month (ex: 9 = september) top view
dm n 3110l c p3 document number: ds 38546 rev. 3 - 2 2 of 7 www.diodes.com january 2017 ? diodes incorporated dm n 3110l c p3 advanced information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 30 v gate - source voltage v gss 12 v continuous drain current (note 5 ) v gs = 8 v steady state t a = + 25c t a = + 70 c i d 3 . 2 2 . 5 a continuous drain current (note 5 ) v gs = 4 .5v steady state t a = + 25c t a = + 70 c i d 3 . 0 2 . 4 a pulsed drain current (note 6 ) i dm 1 5 a thermal characteristics characteristic symbol value unit power dissipation (note 7 ) p d 0. 5 w thermal resistance, junction to ambient @t a = + 25c (note 7 ) r ja 250 c/w power dissipation (note 5 ) p d 1. 38 w thermal resistance, junction to ambient @t a = + 25c (note 5 ) r ja 90 c/w operating and storage temperature range t j , t stg - 55 to +150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 30 gs = 0v, i d = 250a j = + 25c i dss 100 n a v ds = 24 v, v gs = 0v gate - source leakage i gss 50 n a v gs = 1 0 v , v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs( th ) 0. 65 0.8 1. 1 v v ds = v gs , i d = 250 a ds (on) 5 2 69 m gs = 8 v, i d = 0.5 a gs = 4.5v, i d = 0.5 a 76 1 10 v gs = 2.5v, i d = 0.5 a 1 10 160 v gs = 1 . 8 v, i d = 0.5 a forward transfer admittance |y fs | 3.3 ds = 15 v , i d = 0.5 a diode forward voltage v sd 0.7 0 . 9 v v gs = 0v, i s = 0.5 a reverse recovery charge q rr 1. 7 nc v dd = 1 5 v, i f = 0.5 a, di/dt = 3 00a/s rr 5 . 2 ns dynamic characteristics (note 9 ) input capacitance c iss 1 10 150 pf v ds = 15 v , v gs = 0v , f = 1.0mhz output capacitance c oss 71 99 reverse transfer capacitance c rss 4.3 10 series gate resistance r g gs =0v, v ds =0v total gate charge q g 1 , 090 1 , 5 20 p c v gs = 4.5 v, v ds = 15 v , i d = 0.5 a gate - source charge q gs 130 gate - drain charge q gd 1 30 gate charge at v th q g ( th ) 1 10 turn - on delay time t d( on ) 4 . 8 7 ns v d s = 15 v , v gs = 4 .5 v, r g = 2 d = 0.5 a turn - on rise time t r 2 . 8 turn - off delay time t d( off ) 1 6 .5 20 turn - off fall time t f 9 .5 notes: 5 . device mounted on fr - 4 material with 1 inch 2 (6.45 cm 2 ), 2oz. (0.071 mm thick) cu . 6 . repetitive rating, pulse width limited by junction temperature. 7. device mounted on fr - 4 pcb with minimum recommended pad layout, single sided . 8 . short duration pulse test used to minimize self - heating effect . 9 . guaranteed by design. not subject to production testing.
dm n 3110l c p3 document number: ds 38546 rev. 3 - 2 3 of 7 www.diodes.com january 2017 ? diodes incorporated dm n 3110l c p3 advanced information 0.0 2.0 4.0 6.0 8.0 10.0 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v ds , drain - source voltage (v) fig ure 1 . typical output characteristic v gs = 1.2v v gs = 1.5v v gs = 1.8v v gs = 8.0v v gs = 4.5v v gs =3.0v v gs = 2.0v v gs = 2.5v 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0 2 4 6 8 10 r ds(on) , drain - source on - resistance ( d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs = 10v v gs = 4.5v v gs = 2.5v v gs = 8.0v 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0 2 4 6 8 10 r ds(on) , drain - source on - resistance ( d , drain current (a) figure 4. typical on - resistance vs. drain current and junction temperature v gs =8v - 55 25 85 150 125 0.6 0.8 1 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( ( ) figure 5. on - resistance variation with junction temperature v gs = 8.0v, i d = 0.5a v gs = 4.5v, i d = 0.5a 0.03 0.04 0.05 0.06 0.07 0.08 0.09 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance ( j , junction temperature ( gs = 8.0v, i d = 0.5a v gs = 4.5v, i d = 0.5a 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = 5v - 55 25 85 125 150
dm n 3110l c p3 document number: ds 38546 rev. 3 - 2 4 of 7 www.diodes.com january 2017 ? diodes incorporated dm n 3110l c p3 advanced information 0.2 0.4 0.6 0.8 1 1.2 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = 250 a i d = 1ma 1 10 100 1000 0 5 10 15 20 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 9. typical junction capacitance f=1mhz c rss c oss c iss 0 2 4 6 8 0 0.4 0.8 1.2 1.6 2 v gs (v) qg (nc) figure 10. gate charge v ds = 15v, i d = 0.5a 0.01 0.1 1 10 100 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 11. soa, safe operation area p w =10s p w =10ms p w =100 s dc r ds(on) limited p w =1ms p w =100ms t j(max) = 150 t c = 25 single pulse dut on 1*mrp board v gs = 8v p w =1s p w =100ms 0 50 100 150 200 250 300 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 1000 p (pk) , peak transient power (w) t1, pulse duration time (sec) figure 12. single pulse maximum power dissipation single pulse r ja ja ja j - t a =p * r ja i s , source current (a) v sd , source - drain voltage (v) figure 8. diode forward voltage vs. current t j = 125 o c t j = 85 o c t j = 25 o c t j = - 55 o c v gs = 0v t j = 150 o c
dm n 3110l c p3 document number: ds 38546 rev. 3 - 2 5 of 7 www.diodes.com january 2017 ? diodes incorporated dm n 3110l c p3 advanced information 0.001 0.01 0.1 1 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.9 d=0.7 r ja (t) = r(t) * r ja r ja = 100 ja ja ja /
dm n 3110l c p3 document number: ds 38546 rev. 3 - 2 6 of 7 www.diodes.com january 2017 ? diodes incorporated dm n 3110l c p3 advanced information package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. x 2 - dsn1006 - 3 suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. x 2 - dsn1006 - 3 x2 - dsn1006 - 3 dim min max typ a -- 0.348 0.3 2 a1 -- -- 0.08 b 0.14 0.16 0.15 b2 0.49 0.51 0.50 d 0.56 0.64 0.60 e 0.96 1.04 1.00 e -- -- 0.35 e1 -- -- 0.65 k -- -- 0.325 l 0.21 0.29 0.25 l a 0.21 0.29 0.25 all dimensions in mm dimensions value (in mm) g 0.30 g1 0.20 x 0.25 x1 0.70 y 0.40 y1 1.10 d 1 e d k l la e b e1 b2 a a1 seating plane pin #1 x1 y1 y g x g1
dm n 3110l c p3 document number: ds 38546 rev. 3 - 2 7 of 7 www.diodes.com january 2017 ? diodes incorporated dm n 3110l c p3 advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized a pplication. products described herein may be covered by one or more united states, international or foreign patents pending. product name s and markings noted herein may also be covered by one or more united states, international or foreign trademarks. th is document is written in english but may be translated into multiple languages for reference. only the english version of th is document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in signifi cant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. c ustomers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support de vices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requireme nts concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further , customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 7 , diodes incorporated www.di odes.com
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